Prototypes of Devices for Heterogeneous Hybrid Semiconductor Electronics with an Embedded Biomolecular Domain

Q4 Engineering
M. A. Baranov, E. K. Karseeva, O. Yu. Tsybin
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引用次数: 0

Abstract

A macromolecular system embedded in a semiconductor microelectronic device is considered as a biomolecular nano- or micro-sized domain that performs the functions of converting acoustic and electromagnetic signals. The issues of the choice of substances, the dynamic and structural-functional state of the domain, and the physical foundations of its interaction with matrix elements are discussed. The process of excitation of forced oscillations in amino acid molecules (for example, glycine, tryptophan, and diphenyl-L-alanine) under the influence of short (10–100 ps) packets of electrical signals in the IR range with a frequency in the range of 1–125 THz is studied by the method of supercomputer nonequilibrium modeling of molecular dynamics. The acoustoelectric interpretation of oscillation generation is carried out using a unified equivalent circuit of the peptide group. Examples of prototypes of heterogeneous devices being developed are given. It is concluded that embedded biomolecular domains, presented as a multifunctional element base, are promising for signal conversion in hybrid microelectronics.

Abstract Image

嵌入生物分子域的异质混合半导体电子器件原型
摘要 将嵌入半导体微电子装置的大分子系统视为一个纳米或微米级的生物分子域,它具有转换声信号和电磁信号的功能。本文讨论了物质的选择、畴的动态和结构功能状态及其与矩阵元素相互作用的物理基础等问题。通过超级计算机分子动力学非平衡建模方法,研究了在频率为 1-125 太赫兹的红外范围内短(10-100 ps)电信号包的影响下,氨基酸分子(如甘氨酸、色氨酸和二苯基-L-丙氨酸)受迫振荡的激发过程。利用肽组的统一等效电路对振荡的产生进行了声电解释。给出了正在开发的异质设备原型的例子。结论是,作为多功能元素基础的嵌入式生物分子域在混合微电子学的信号转换方面大有可为。
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来源期刊
Russian Microelectronics
Russian Microelectronics Materials Science-Materials Chemistry
CiteScore
0.70
自引率
0.00%
发文量
43
期刊介绍: Russian Microelectronics  covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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