Experimental study of time-dependent dielectric degradation by means of random telegraph noise spectroscopy

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Nishant Saini , Davide Tierno , Kristof Croes , Valeri Afanas’ev , Jan Van Houdt
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Abstract

Time-dependent dielectric breakdown (TDDB) is commonly used to assess dielectric failures. However, TDDB provides limited insights into the physics of dielectric degradation. In this paper, we explore the potential of random telegraph noise (RTN) spectroscopy to study the physics of dielectric breakdown. RTN is a fluctuation in the dielectric leakage current due to capture/emission of injected electrons by dielectric traps. We report an RTN study of large-area alumina (Al2O3) thin films. A stress experiment is performed on a fresh sample, where RTN is measured before, during and after stress. Important degradation signatures are identified in the RTN spectra. The degradation imposed by the applied stress is observed as a consistent transition between two distributions, where the RTN transitions from an initial pre-stress Gaussian, to a final post-stress exponential. A calculation of the noise entropy, which generally increases with growing material disorder, confirms the transition to an exponential distribution. Finally, we relate the RTN distribution parameters to the defectivity of the dielectric.

通过随机电报噪声光谱法对随时间变化的介电降解进行实验研究
随时间变化的介质击穿(TDDB)通常用于评估介质失效。然而,TDDB 对介电降解的物理原理提供的洞察力有限。在本文中,我们探讨了随机电报噪声(RTN)光谱法在研究介质击穿物理方面的潜力。RTN 是介电陷阱捕获/发射注入电子导致的介电漏电流波动。我们报告了大面积氧化铝(Al2O3)薄膜的 RTN 研究。在新鲜样品上进行了应力实验,测量了应力前、应力期间和应力后的 RTN。在 RTN 光谱中发现了重要的降解特征。所施加的应力导致的退化表现为两种分布之间的一致过渡,即 RTN 从最初的应力前高斯分布过渡到最终的应力后指数分布。对噪声熵的计算证实了向指数分布的过渡,噪声熵通常会随着材料无序度的增加而增加。最后,我们将 RTN 分布参数与电介质的缺陷率联系起来。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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