HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism

IF 2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Qianqian Huang;Shaodi Xu;Ru Huang
{"title":"HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism","authors":"Qianqian Huang;Shaodi Xu;Ru Huang","doi":"10.1109/JXCDC.2023.3338480","DOIUrl":null,"url":null,"abstract":"Field-effect transistors (FETs) switched by quantum band-to-band tunneling (BTBT) mechanism, rather than conventional thermionic emission mechanism, are emerging as an exciting device candidate for future ultralow-power electronics due to their exceptional electronic properties of subthermionic subthreshold swing. However, fundamental limitations in drive current have hindered such technology encountering for high-performance and high-speed operations, especially for silicon-based device. Here, we demonstrate a novel pathway of integrating tunneling and thermionic emission mechanisms together, to circumvent their respective limitation and design a hybrid adaptively modulated FET (HamFET) that orients power saving and performance enhancement simultaneously. This transistor architecture, utilizing a nested source configuration without cost or area penalties, exhibits both ultrasteep (subthermionic) subthreshold swing and the largest “on” and “off” current ratio over the state-of-the-art tunneling transistors. Our design methodology of hybrid switching mechanism is also applicable to other mechanism, material, and architecture systems, opening the doors to a range of high-speed application opportunities for ultralow-power but performance-insufficient electronics.","PeriodicalId":54149,"journal":{"name":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits","volume":"10 ","pages":"1-7"},"PeriodicalIF":2.0000,"publicationDate":"2023-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10336778","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10336778/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0

Abstract

Field-effect transistors (FETs) switched by quantum band-to-band tunneling (BTBT) mechanism, rather than conventional thermionic emission mechanism, are emerging as an exciting device candidate for future ultralow-power electronics due to their exceptional electronic properties of subthermionic subthreshold swing. However, fundamental limitations in drive current have hindered such technology encountering for high-performance and high-speed operations, especially for silicon-based device. Here, we demonstrate a novel pathway of integrating tunneling and thermionic emission mechanisms together, to circumvent their respective limitation and design a hybrid adaptively modulated FET (HamFET) that orients power saving and performance enhancement simultaneously. This transistor architecture, utilizing a nested source configuration without cost or area penalties, exhibits both ultrasteep (subthermionic) subthreshold swing and the largest “on” and “off” current ratio over the state-of-the-art tunneling transistors. Our design methodology of hybrid switching mechanism is also applicable to other mechanism, material, and architecture systems, opening the doors to a range of high-speed application opportunities for ultralow-power but performance-insufficient electronics.
HamFET:采用混合开关机制的高性能亚热电晶体管
场效应晶体管(FET)通过量子带对带隧道(BTBT)机制而非传统的热离子发射机制进行开关,由于其具有亚热离子亚阈值摆动的特殊电子特性,正在成为未来超低功耗电子器件的一个令人兴奋的候选器件。然而,驱动电流的基本限制阻碍了这种技术实现高性能和高速运行,尤其是对于硅基器件。在这里,我们展示了一种将隧道发射和热释电发射机制整合在一起的新方法,以规避它们各自的限制,并设计出一种混合自适应调制场效应晶体管(HamFET),可同时实现省电和性能提升。这种晶体管结构采用嵌套源配置,不影响成本和面积,与最先进的隧道晶体管相比,具有超深(亚热释光)亚阈值摆动和最大的 "开 "与 "关 "电流比。我们的混合开关机制设计方法也适用于其他机制、材料和架构系统,从而为超低功耗但性能不足的电子产品带来了一系列高速应用机会。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
5.00
自引率
4.20%
发文量
11
审稿时长
13 weeks
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