Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-02-01 DOI:10.1016/j.sse.2024.108866

Hongwei Tang , Attilio Belmonte , Dennis Lin , Valeri Afanas'ev , Patrick Verdonck , Adrian Chasin , Harold Dekkers , Romain Delhougne , Jan Van Houdt , Gouri Sankar Kar

引用次数: 0

Abstract

We perform trap density (D_t) extraction through admittance measurements on amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin films using multi-finger MOS structures. We investigate the impact of channel length (L_ch) on C-V and G-V characteristics and demonstrate a reliable trap density extraction method in short channel devices. The method is validated for pure and Magnesium-doped a-IGZO (Mg:IGZO). The experimental results are consistent with simulations based on a distributed network model.

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通过多指 MOS 结构中的导纳测量表征氧化铟镓锌薄膜中的陷阱密度

我们利用多指 MOS 结构，通过对非晶铟镓锌氧化物（a-IGZO）薄膜进行导纳测量来提取陷阱密度（Dt）。我们研究了沟道长度 (Lch) 对 C-V 和 G-V 特性的影响，并在短沟道器件中演示了一种可靠的陷阱密度提取方法。该方法针对纯 a-IGZO 和掺镁 a-IGZO (Mg:IGZO)进行了验证。实验结果与基于分布式网络模型的模拟结果一致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.