{"title":"A 85-Gb/s PAM-4 TIA With 2.2-mApp Maximum Linear Input Current in 28-nm CMOS","authors":"Shuaizhe Ma;Zhenyu Yin;Nianquan Ran;Yifei Xia;Ruixuan Yang;Chuanhao Yu;Songqin Xu;Binhao Wang;Nan Qi;Bing Zhang;Jingbo Shi;Xiaoyan Gui;Li Geng;Dan Li","doi":"10.1109/LSSC.2024.3351683","DOIUrl":null,"url":null,"abstract":"This letter presents a 100-Gb/s CMOS PAM-4 transimpedance amplifier (TIA) with multimilliampere maximum linear input current. A low-noise high-linearity TIA architecture is proposed, leveraging the reconfigurable front-end (FE) TIA and the continuous time linear equalizer (CTLE) synced at multiple gain modes. Implemented in a 28-nm CMOS technology, the TIA achieves bandwidth of more than 24 GHz with transimpedance gain of 65 dB\n<inline-formula> <tex-math>$\\Omega $ </tex-math></inline-formula>\n, while showing an acrlong IRN current density of 10.4 pA/\n<inline-formula> <tex-math>$\\surd $ </tex-math></inline-formula>\nHz. The maximum linear input current reaches 2.2 mApp and the total harmonic distortion (THD) is less than 3% for an output swing of 600 mV\n<inline-formula> <tex-math>$_{\\rm pp, {\\mathrm{ diff}}}$ </tex-math></inline-formula>\n. The chip consumes power of 56 mW from 1.4 and 1.1-V supply.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"50-53"},"PeriodicalIF":2.2000,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10384640/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0
Abstract
This letter presents a 100-Gb/s CMOS PAM-4 transimpedance amplifier (TIA) with multimilliampere maximum linear input current. A low-noise high-linearity TIA architecture is proposed, leveraging the reconfigurable front-end (FE) TIA and the continuous time linear equalizer (CTLE) synced at multiple gain modes. Implemented in a 28-nm CMOS technology, the TIA achieves bandwidth of more than 24 GHz with transimpedance gain of 65 dB
$\Omega $
, while showing an acrlong IRN current density of 10.4 pA/
$\surd $
Hz. The maximum linear input current reaches 2.2 mApp and the total harmonic distortion (THD) is less than 3% for an output swing of 600 mV
$_{\rm pp, {\mathrm{ diff}}}$
. The chip consumes power of 56 mW from 1.4 and 1.1-V supply.