A 85-Gb/s PAM-4 TIA With 2.2-mApp Maximum Linear Input Current in 28-nm CMOS

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Shuaizhe Ma;Zhenyu Yin;Nianquan Ran;Yifei Xia;Ruixuan Yang;Chuanhao Yu;Songqin Xu;Binhao Wang;Nan Qi;Bing Zhang;Jingbo Shi;Xiaoyan Gui;Li Geng;Dan Li
{"title":"A 85-Gb/s PAM-4 TIA With 2.2-mApp Maximum Linear Input Current in 28-nm CMOS","authors":"Shuaizhe Ma;Zhenyu Yin;Nianquan Ran;Yifei Xia;Ruixuan Yang;Chuanhao Yu;Songqin Xu;Binhao Wang;Nan Qi;Bing Zhang;Jingbo Shi;Xiaoyan Gui;Li Geng;Dan Li","doi":"10.1109/LSSC.2024.3351683","DOIUrl":null,"url":null,"abstract":"This letter presents a 100-Gb/s CMOS PAM-4 transimpedance amplifier (TIA) with multimilliampere maximum linear input current. A low-noise high-linearity TIA architecture is proposed, leveraging the reconfigurable front-end (FE) TIA and the continuous time linear equalizer (CTLE) synced at multiple gain modes. Implemented in a 28-nm CMOS technology, the TIA achieves bandwidth of more than 24 GHz with transimpedance gain of 65 dB\n<inline-formula> <tex-math>$\\Omega $ </tex-math></inline-formula>\n, while showing an acrlong IRN current density of 10.4 pA/\n<inline-formula> <tex-math>$\\surd $ </tex-math></inline-formula>\nHz. The maximum linear input current reaches 2.2 mApp and the total harmonic distortion (THD) is less than 3% for an output swing of 600 mV\n<inline-formula> <tex-math>$_{\\rm pp, {\\mathrm{ diff}}}$ </tex-math></inline-formula>\n. The chip consumes power of 56 mW from 1.4 and 1.1-V supply.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"50-53"},"PeriodicalIF":2.2000,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10384640/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0

Abstract

This letter presents a 100-Gb/s CMOS PAM-4 transimpedance amplifier (TIA) with multimilliampere maximum linear input current. A low-noise high-linearity TIA architecture is proposed, leveraging the reconfigurable front-end (FE) TIA and the continuous time linear equalizer (CTLE) synced at multiple gain modes. Implemented in a 28-nm CMOS technology, the TIA achieves bandwidth of more than 24 GHz with transimpedance gain of 65 dB $\Omega $ , while showing an acrlong IRN current density of 10.4 pA/ $\surd $ Hz. The maximum linear input current reaches 2.2 mApp and the total harmonic distortion (THD) is less than 3% for an output swing of 600 mV $_{\rm pp, {\mathrm{ diff}}}$ . The chip consumes power of 56 mW from 1.4 and 1.1-V supply.
采用 28-nm CMOS、最大线性输入电流为 2.2 mApp 的 85 Gb/s PAM-4 TIA
本文介绍了一种具有多毫安最大线性输入电流的 100-Gb/s CMOS PAM-4 互阻抗放大器(TIA)。利用可重构前端 (FE) TIA 和在多种增益模式下同步的连续时间线性均衡器 (CTLE),提出了一种低噪声高线性度 TIA 架构。该 TIA 采用 28-nm CMOS 技术实现,带宽超过 24 GHz,跨阻增益达到 65 dB,同时显示出 10.4 pA/ $\surd $ Hz 的 acrlong IRN 电流密度。最大线性输入电流达到 2.2 mApp,输出摆幅为 600 mV $_{\rm pp, {\mathrm{ diff}}$ 时,总谐波失真(THD)小于 3%。芯片在 1.4 V 和 1.1 V 电源下的功耗为 56 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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