Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Siheng Chen , Peng Cui , Handoko Linewih , Kuan Yew Cheong , Mingsheng Xu , Xin Luo , Liu Wang , Jiuji Sun , Jiacheng Dai , Jisheng Han , Xiangang Xu
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Abstract

The surface electronic states and defects of gallium nitride based high-electron-mobility transistors (HEMTs) play a critical role affecting channel electron density, electron mobility, leakage current, radio frequency (RF) power output and power added efficiency of devices. This article demonstrates the improved surface properties of InAlN/GaN HEMTs through forming gas (FG) annealing, resulting in a significantly improved electrical properties. The X-ray photoelectron spectra reveals a reduction of surface native oxide after FG H2/N2 annealing whereby the amount of Ga–O bonds is decreased. Compared with N2 annealing, an on-resistance of 1.68 Ω·mm, a subthreshold swing of 118 mV/dec, a transconductance peak of 513 mS/mm, a gate diode breakdown voltage of surpassing 42 V, and a high current/power gain cutoff frequency (fT/fmax) of 165/165 GHz are achieved by the 50-nm InAlN/GaN HEMT on Si substrate.

通过成型气体退火提高 InAlN/GaN 高电子迁移率晶体管的电气性能
基于氮化镓的高电子迁移率晶体管(HEMT)的表面电子状态和缺陷对器件的沟道电子密度、电子迁移率、漏电流、射频(RF)功率输出和功率附加效率有着至关重要的影响。本文展示了通过成型气体(FG)退火改善 InAlN/GaN HEMT 的表面特性,从而显著提高其电气特性。X 射线光电子能谱显示,FG H2/N2 退火后,表面原生氧化物减少,Ga-O 键的数量也随之减少。与 N2 退火相比,硅衬底上的 50 纳米 InAlN/GaN HEMT 实现了 1.68 Ω-mm的导通电阻、118 mV/dec 的亚阈值摆幅、513 mS/mm 的跨导峰值、超过 42 V 的栅极二极管击穿电压以及 165/165 GHz 的高电流/功率增益截止频率 (fT/fmax)。
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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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