Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-01-19 DOI:10.1016/j.sse.2024.108861

Siheng Chen , Peng Cui , Handoko Linewih , Kuan Yew Cheong , Mingsheng Xu , Xin Luo , Liu Wang , Jiuji Sun , Jiacheng Dai , Jisheng Han , Xiangang Xu

{"title":"Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing","authors":"Siheng Chen , Peng Cui , Handoko Linewih , Kuan Yew Cheong , Mingsheng Xu , Xin Luo , Liu Wang , Jiuji Sun , Jiacheng Dai , Jisheng Han , Xiangang Xu","doi":"10.1016/j.sse.2024.108861","DOIUrl":null,"url":null,"abstract":"<div>The surface electronic states and defects of gallium nitride based high-electron-mobility transistors (HEMTs) play a critical role affecting channel electron density, electron mobility, leakage current, radio frequency (RF) power output and power added efficiency of devices. This article demonstrates the improved surface properties of InAlN/GaN HEMTs through forming gas (FG) annealing, resulting in a significantly improved electrical properties. The X-ray photoelectron spectra reveals a reduction of surface native oxide after FG H2/N2 annealing whereby the amount of Ga–O bonds is decreased. Compared with N2 annealing, an on-resistance of 1.68 Ω·mm, a subthreshold swing of 118 mV/dec, a transconductance peak of 513 mS/mm, a gate diode breakdown voltage of surpassing 42 V, and a high current/power gain cutoff frequency (fT/fmax) of 165/165 GHz are achieved by the 50-nm InAlN/GaN HEMT on Si substrate.</div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124000108","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

The surface electronic states and defects of gallium nitride based high-electron-mobility transistors (HEMTs) play a critical role affecting channel electron density, electron mobility, leakage current, radio frequency (RF) power output and power added efficiency of devices. This article demonstrates the improved surface properties of InAlN/GaN HEMTs through forming gas (FG) annealing, resulting in a significantly improved electrical properties. The X-ray photoelectron spectra reveals a reduction of surface native oxide after FG H₂/N₂ annealing whereby the amount of Ga–O bonds is decreased. Compared with N₂ annealing, an on-resistance of 1.68 Ω·mm, a subthreshold swing of 118 mV/dec, a transconductance peak of 513 mS/mm, a gate diode breakdown voltage of surpassing 42 V, and a high current/power gain cutoff frequency (f_T/f_max) of 165/165 GHz are achieved by the 50-nm InAlN/GaN HEMT on Si substrate.

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通过成型气体退火提高 InAlN/GaN 高电子迁移率晶体管的电气性能

基于氮化镓的高电子迁移率晶体管（HEMT）的表面电子状态和缺陷对器件的沟道电子密度、电子迁移率、漏电流、射频（RF）功率输出和功率附加效率有着至关重要的影响。本文展示了通过成型气体（FG）退火改善 InAlN/GaN HEMT 的表面特性，从而显著提高其电气特性。X 射线光电子能谱显示，FG H2/N2 退火后，表面原生氧化物减少，Ga-O 键的数量也随之减少。与 N2 退火相比，硅衬底上的 50 纳米 InAlN/GaN HEMT 实现了 1.68 Ω-mm的导通电阻、118 mV/dec 的亚阈值摆幅、513 mS/mm 的跨导峰值、超过 42 V 的栅极二极管击穿电压以及 165/165 GHz 的高电流/功率增益截止频率 (fT/fmax)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.