Quantum information processing in electrically defined Silicon triple quantum dot systems

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Ji-Hoon Kang, Hoon Ryu
{"title":"Quantum information processing in electrically defined Silicon triple quantum dot systems","authors":"Ji-Hoon Kang,&nbsp;Hoon Ryu","doi":"10.1016/j.sse.2024.108863","DOIUrl":null,"url":null,"abstract":"<div><p><span><span>Quantum bits (qubits) operations in electrically defined </span>Silicon<span> (Si) triple quantum dots (TQDs) are computationally investigated to elevate the potential of TQD structure as a platform for quantum information processing. Employing a realistic Si</span></span><span><math><mo>/</mo></math></span><span><span><span>Si-germanium heterostructure as a target model, device simulations are conducted to secure an initialized qubit state. Basic </span>programmability is verified through implementation of individual qubit operations and 2-qubit entangling operations between neighboring QDs. Constructing a gate sequence composed of 1-qubit and 2-qubit blocks, then, we not only generate three-qubit Greenberger–Horne–Zeilinger state, but also quantify the degradation of state fidelity under the inevitable inaccuracy which are incorporated in the dominant factors of spin-qubit </span>Hamiltonian<span>. Presenting engineering details that are hard to be carried by simulations based on the first principle theory, this work can be served as a practical guideline for designs of scalable quantum processors with electron spin-qubits in Si QD platforms.</span></span></p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124000121","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Quantum bits (qubits) operations in electrically defined Silicon (Si) triple quantum dots (TQDs) are computationally investigated to elevate the potential of TQD structure as a platform for quantum information processing. Employing a realistic Si/Si-germanium heterostructure as a target model, device simulations are conducted to secure an initialized qubit state. Basic programmability is verified through implementation of individual qubit operations and 2-qubit entangling operations between neighboring QDs. Constructing a gate sequence composed of 1-qubit and 2-qubit blocks, then, we not only generate three-qubit Greenberger–Horne–Zeilinger state, but also quantify the degradation of state fidelity under the inevitable inaccuracy which are incorporated in the dominant factors of spin-qubit Hamiltonian. Presenting engineering details that are hard to be carried by simulations based on the first principle theory, this work can be served as a practical guideline for designs of scalable quantum processors with electron spin-qubits in Si QD platforms.

电定义硅三量子点系统中的量子信息处理
对电学定义的硅(Si)三量子点(TQDs)中的量子比特(qubit)操作进行了计算研究,以提升 TQD 结构作为量子信息处理平台的潜力。以现实中的硅/硅锗异质结构为目标模型,进行了器件仿真,以确保初始化量子比特状态。通过实现单个量子比特操作和相邻 QD 之间的双量子比特纠缠操作,验证了基本的可编程性。通过构建由 1 量子位和 2 量子位块组成的门序列,我们不仅生成了三量子位格林伯格-霍恩-蔡林格状态,还量化了状态保真度在不可避免的误差下的衰减情况,这些误差被纳入自旋量子位哈密顿的主导因子中。这项工作提出了基于第一原理理论的模拟难以实现的工程细节,可作为在硅 QD 平台上设计具有电子自旋量子比特的可扩展量子处理器的实用指南。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信