From fundamentals to frontiers: a review of memristor mechanisms, modeling and emerging applications

IF 5.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Parth Thakkar, Jeny Gosai, Himangshu Jyoti Gogoi and Ankur Solanki
{"title":"From fundamentals to frontiers: a review of memristor mechanisms, modeling and emerging applications","authors":"Parth Thakkar, Jeny Gosai, Himangshu Jyoti Gogoi and Ankur Solanki","doi":"10.1039/D3TC03692H","DOIUrl":null,"url":null,"abstract":"<p >The escalating demand for artificial intelligence (AI), the internet of things (IoTs), and energy-efficient high-volume data processing has brought the need for innovative solutions to the forefront. The rapid automation surge, while transformative, has unveiled challenges due to processing capacity limitations in this digital age. A promising remedy lies in memristors, offering the potential to transcend the memory and power barriers inherent in the traditional von Neumann architecture, rooted in complementary metal oxide semiconductor (CMOS) devices. This review navigates the intricate landscape of memristors, elucidating their diverse mechanisms that diverge across materials and device architectures. In this review, we discuss all the fundamental processes, such as ion migration, charge trapping/de-trapping, and phase transition that underlies the switching behavior of memristor devices and analytical modelling. Unlocking a realm of possibilities, these mechanisms-based devices hold the promise of revolutionizing diverse sectors. From nociceptors to neural networks, photonic memristors to bio-voltage applications, the versatility of memristors is profound. Culminating the discourse, we survey the progress, anticipate challenges, and illuminate forthcoming prospects in the expansive domain of memristor-based applications.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 5","pages":" 1583-1608"},"PeriodicalIF":5.1000,"publicationDate":"2024-01-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2024/tc/d3tc03692h","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

The escalating demand for artificial intelligence (AI), the internet of things (IoTs), and energy-efficient high-volume data processing has brought the need for innovative solutions to the forefront. The rapid automation surge, while transformative, has unveiled challenges due to processing capacity limitations in this digital age. A promising remedy lies in memristors, offering the potential to transcend the memory and power barriers inherent in the traditional von Neumann architecture, rooted in complementary metal oxide semiconductor (CMOS) devices. This review navigates the intricate landscape of memristors, elucidating their diverse mechanisms that diverge across materials and device architectures. In this review, we discuss all the fundamental processes, such as ion migration, charge trapping/de-trapping, and phase transition that underlies the switching behavior of memristor devices and analytical modelling. Unlocking a realm of possibilities, these mechanisms-based devices hold the promise of revolutionizing diverse sectors. From nociceptors to neural networks, photonic memristors to bio-voltage applications, the versatility of memristors is profound. Culminating the discourse, we survey the progress, anticipate challenges, and illuminate forthcoming prospects in the expansive domain of memristor-based applications.

Abstract Image

Abstract Image

从基础到前沿:忆阻器机制、建模和新兴应用综述
对人工智能(AI)、物联网(IoTs)和高能效大容量数据处理的需求不断攀升,使得对创新解决方案的需求凸显出来。自动化的迅猛发展在带来变革的同时,也带来了数字时代处理能力限制所带来的挑战。忆阻器是一种很有前途的补救措施,它有可能超越传统冯-诺依曼架构固有的内存和功耗障碍,这种架构植根于互补金属氧化物半导体(CMOS)器件。本综述将介绍忆阻器错综复杂的结构,阐明其因材料和器件结构而异的各种机制。在这篇综述中,我们讨论了忆阻器器件开关行为和分析建模的所有基本过程,如离子迁移、电荷捕获/解捕获和相变。这些以机制为基础的器件开启了一个充满可能性的领域,有望为各行各业带来革命性的变化。从痛觉感受器到神经网络,从光子忆阻器到生物电压应用,忆阻器的用途非常广泛。在讨论的最后,我们回顾了在基于忆阻器的广阔应用领域取得的进展、面临的挑战,并阐明了即将到来的前景。
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来源期刊
Journal of Materials Chemistry C
Journal of Materials Chemistry C MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
10.80
自引率
6.20%
发文量
1468
期刊介绍: The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study: Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability. Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine. Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices. Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive. Bioelectronics Conductors Detectors Dielectrics Displays Ferroelectrics Lasers LEDs Lighting Liquid crystals Memory Metamaterials Multiferroics Photonics Photovoltaics Semiconductors Sensors Single molecule conductors Spintronics Superconductors Thermoelectrics Topological insulators Transistors
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