Highly Linear and Low Noise Shell Doped GaN Junctionless Nanotube TeraFET for the Design of Ultra-Wideband LNA in 6G Communications

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2023-12-25 DOI:10.1109/TNANO.2023.3346945

Amir Khodabakhsh;Amir Amini;Mohammad Fallahnejad

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引用次数: 0

Abstract

The evolution trend of wireless communication systems tends to ultra-high data rate, ultra-low latency, and high bandwidth systems. It is foreseen that 6G wireless communication systems will be developed in the range of 100–300 GHz (upper mmWave band) and 300–3000 GHz (terahertz band). In such frequencies, the performance of junctionless field effective transistors is limited due to the reduction of carrier mobility in the device channel. In this paper, for the first time, a shell doped device is proposed to improve RF merit parameters and high-frequency noise performance of GaN junctionless double surrounding nanotube FET device with dual material outer gate (SD-GaN-JNFET). Simulation results show that the doping engineering in the proposed device reduces scattering caused by phonon and doping and increases electron mobility significantly. Parameters g _mmax and ƒ _T of the SD-GaN-JNFET device in channel length of 15 nm are 666 μS and 8.47 THz, respectively, and NF _min <0.025>21 = 22.10 dB and NF = 0.032 dB in central band frequency (140 GHz) was attained. This article opens up an opportunity to achieve high-performance LNA for D-Band 6G applications with the reliable SD-GaN-JNFET device.

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用于 6G 通信中超宽带 LNA 设计的高线性、低噪声壳掺杂 GaN 无结纳米管 TeraFET

无线通信系统的发展趋势是超高数据速率、超低延迟和高带宽系统。预计 6G 无线通信系统将在 100-300 GHz（毫米波上频段）和 300-3000 GHz（太赫兹频段）范围内发展。在这些频率下，由于器件通道中载流子流动性的降低，无结场有效晶体管的性能受到了限制。本文首次提出了一种壳掺杂器件，以改善具有双材料外栅的 GaN 无结双环绕纳米管场效应晶体管器件（SD-GaN-JNFET）的射频优越性参数和高频噪声性能。仿真结果表明，该器件中的掺杂工程减少了声子和掺杂引起的散射，并显著提高了电子迁移率。沟道长度为 15 nm 的 SD-GaN-JNFET 器件的参数 gmmax 和 ƒT 分别为 666 μS 和 8.47 THz，在中心带频率（140 GHz）上达到了 NFmin21 = 22.10 dB 和 NF = 0.032 dB。这篇文章为利用可靠的 SD-GaN-JNFET 器件实现用于 D 波段 6G 应用的高性能 LNA 提供了机会。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.