{"title":"Dual-directional SCR device with dual-gate controlled mechanism for ESD protection in photoelectric chip","authors":"Yujie Liu, Yang Wang, Jian Yang, Xiangliang Jin","doi":"10.1088/1361-6641/ad1b18","DOIUrl":null,"url":null,"abstract":"\n The dual-directional silicon-controlled rectifier (DDSCR) is an electrostatic discharge (ESD) protection device. It can provide positive and negative ESD surge paths and has excellent robustness. However, industry-level sensors operating in strong electromagnetic interference environments impose higher reliability requirements on photoelectric chips. This paper proposed a novel DDSCR with a dual-gate controlled mechanism. By incorporating the gate diode triggering and the gate field modulation mechanism into the traditional DDSCR, and further utilizing additional parasitic PNP transistors for diversion, the proposed device exhibits significantly improved ESD characteristics. Measurement results indicate that, compared to DDSCR, the proposed device exhibits a 27.5% reduction in trigger voltage (Vt1), a 96.1% improvement in holding voltage (Vh), and achieves an equivalent Human Body Model (HBM) protection level of 11.45 kV, demonstrating exceptional design area efficiency. The experimental findings validate the effectiveness of the proposed device in 5 V photoelectric chip applications.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2024-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad1b18","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The dual-directional silicon-controlled rectifier (DDSCR) is an electrostatic discharge (ESD) protection device. It can provide positive and negative ESD surge paths and has excellent robustness. However, industry-level sensors operating in strong electromagnetic interference environments impose higher reliability requirements on photoelectric chips. This paper proposed a novel DDSCR with a dual-gate controlled mechanism. By incorporating the gate diode triggering and the gate field modulation mechanism into the traditional DDSCR, and further utilizing additional parasitic PNP transistors for diversion, the proposed device exhibits significantly improved ESD characteristics. Measurement results indicate that, compared to DDSCR, the proposed device exhibits a 27.5% reduction in trigger voltage (Vt1), a 96.1% improvement in holding voltage (Vh), and achieves an equivalent Human Body Model (HBM) protection level of 11.45 kV, demonstrating exceptional design area efficiency. The experimental findings validate the effectiveness of the proposed device in 5 V photoelectric chip applications.
期刊介绍:
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.