Oxygen reduction through specific surface area control of AlN powder for AlN single-crystal growth by physical vapor transport

IF 16.4 1区化学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Accounts of Chemical Research Pub Date : 2024-01-04 DOI:10.1088/1361-6641/ad1b13

ZeRen Wang, Xing-Yu Zhu, Qi-Yue Zhao, Jie-Jun Wu, Tongjun Yu

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Abstract

In the physical vapor transport (PVT) growth of AlN, re-oxidation of aluminum nitride (AlN) source powder happening in the process of setting seed crystal into crucible seems to be unavoidable. This process introduces oxygen just before AlN growth and has a significant impact on the crystal quality. In this paper, a high and low-temperature alternative sintering method (HLAS) is proposed based on the idea of specific surface area control to reduce the re-oxidation of AlN source powder. This method introduces cyclic sintering between 1500°C and 1900°C to the conventional three-step treatment repeatedly, which utilizes possible phase-transition along with the processes of powder sintering back and forth to increase the particle size and decrease the specific surface area significantly. The SEM (Scanning electron microscope) and BET (Brunauer, Emmett, and Teller) results showed that the specific surface area of AlN powder treated with the HLAS method can be reduced to one-third of that with the conventional method. Thus, the SIMS (secondary ion mass spectrometry) confirmed the reduction of oxygen impurity in AlN single-crystals to a good level of 1.5×1017cm-3. It is clear that this HLAS process is an effective way of controlling the specific surface area of AlN source powder, which contributes to the suppression of oxygen influence on PVT-AlN growth.

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通过控制氮化铝粉末的比表面积减少氧气含量，从而利用物理气相传输技术实现氮化铝单晶生长

在氮化铝的物理气相传输（PVT）生长过程中，将氮化铝（AlN）源粉末放入坩埚的过程中发生的再氧化似乎是不可避免的。这一过程会在氮化铝生长之前引入氧气，并对晶体质量产生重大影响。本文提出了一种基于比表面积控制思想的高低温替代烧结方法（HLAS），以减少氮化铝源粉末的再氧化。该方法在传统的三步反复处理法中引入了 1500°C 至 1900°C 的循环烧结，在粉末来回烧结的过程中利用可能的相变来显著增加粒度和减少比表面积。扫描电子显微镜（SEM）和 BET（Brunauer、Emmett 和 Teller）结果表明，用 HLAS 方法处理的 AlN 粉末的比表面积可减少到传统方法的三分之一。因此，SIMS（二次离子质谱法）证实，AlN 单晶中的氧杂质减少到了 1.5×1017cm-3 的良好水平。显然，这种 HLAS 工艺是控制 AlN 源粉末比表面积的有效方法，有助于抑制氧对 PVT-AlN 生长的影响。

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来源期刊

Accounts of Chemical Research 化学-化学综合

CiteScore

31.40

自引率

1.10%

发文量

312

审稿时长

2 months

期刊介绍： Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance. Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.