Silicon nitride resistance switching MIS cells doped with silicon atoms

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-01-03 DOI:10.1016/j.sse.2023.108851

A. Mavropoulis , N. Vasileiadis , C. Bonafos , P. Normand , V. Ioannou-Sougleridis , G. Ch. Sirakoulis , P. Dimitrakis

引用次数: 0

Abstract

Stoichiometric SiN_x layers (x = [N]/[Si] = 1.33) are doped with Si atoms by ultra-low energy ion implantation (ULE-II) and subsequently annealed at different temperatures in inert ambient conditions. Detailed material and memory cells characterization is performed to investigate the effect of Si dopants on the switching properties and performance of the fabricated resistive memory cells. In this context extensive dc current–voltage and impedance spectroscopy measurements are carried out systematically and the role of doping in dielectric properties of the nitride films is enlightened. The dc and ac conduction mechanisms are investigated in a comprehensive way. Room temperature retention characteristics of resistive states are also presented.

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掺杂硅原子的氮化硅电阻开关 MIS 电池

通过超低能耗离子注入 (ULE-II) 方法，将硅原子掺杂到符合化学计量的 SiNx 层（x = [N]/[Si] = 1.33）中，然后在惰性环境条件下的不同温度下进行退火。对材料和存储单元进行了详细的表征，以研究硅掺杂对所制造的电阻式存储单元的开关特性和性能的影响。在此背景下，系统地进行了大量直流电流-电压和阻抗光谱测量，并揭示了掺杂在氮化物薄膜介电性能中的作用。此外，还对直流和交流传导机制进行了全面研究。此外，还介绍了电阻态的室温保持特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.