Zhongyuan Wu , Fengyu Luo , Xiaohong Zheng , Jin Liu
{"title":"Bismuth tungstate nanosheets sensors based on Temkin adsorption model for triethylamine detection","authors":"Zhongyuan Wu , Fengyu Luo , Xiaohong Zheng , Jin Liu","doi":"10.1016/j.sse.2023.108850","DOIUrl":null,"url":null,"abstract":"<div><p>Nanostructured Bi<sub>2</sub>WO<sub>6</sub> and Bi<sub>2</sub>W<sub>2</sub>O<sub>9</sub> were synthesized using a hydrothermal method. The crystal structure, morphology, and specific surface area were analyzed via X-ray diffraction, scanning electron microscopy, Brunauer–Emmett–Teller and X-ray photoelectron spectroscopy (XPS) analysis, respectively. The characterization results show that Bi<sub>2</sub>WO<sub>6</sub> has a higher specific surface area and a larger pore size than Bi<sub>2</sub>W<sub>2</sub>O<sub>9</sub>, which promote oxygen adsorption and surface reactions. Gas-sensitive tests show that both sensors have a lower detection limit of 2.5 ppm as well as short response and recovery times for detecting triethylamine (TEA). They also have excellent cycling and long-term stability at 180 °C and exhibit excellent gas-sensing performance. The Bi<sub>2</sub>WO<sub>6</sub> sensor has a higher response and sensitivity, as well as better selectivity, than the Bi<sub>2</sub>W<sub>2</sub>O<sub>9</sub> sensor, which is related to the uniformly layered structure of the former material. We have analyzed the mechanism that enables these sensors to detect TEA and have used the Temkin adsorption model to explain the linear relationship. We find that this model provides an excellent theoretical foundation for fitting the working curve of these semiconductor sensors.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"213 ","pages":"Article 108850"},"PeriodicalIF":1.4000,"publicationDate":"2023-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110123002630","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Nanostructured Bi2WO6 and Bi2W2O9 were synthesized using a hydrothermal method. The crystal structure, morphology, and specific surface area were analyzed via X-ray diffraction, scanning electron microscopy, Brunauer–Emmett–Teller and X-ray photoelectron spectroscopy (XPS) analysis, respectively. The characterization results show that Bi2WO6 has a higher specific surface area and a larger pore size than Bi2W2O9, which promote oxygen adsorption and surface reactions. Gas-sensitive tests show that both sensors have a lower detection limit of 2.5 ppm as well as short response and recovery times for detecting triethylamine (TEA). They also have excellent cycling and long-term stability at 180 °C and exhibit excellent gas-sensing performance. The Bi2WO6 sensor has a higher response and sensitivity, as well as better selectivity, than the Bi2W2O9 sensor, which is related to the uniformly layered structure of the former material. We have analyzed the mechanism that enables these sensors to detect TEA and have used the Temkin adsorption model to explain the linear relationship. We find that this model provides an excellent theoretical foundation for fitting the working curve of these semiconductor sensors.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.