A unified core model of double-gate and surrounding-gate MOSFETs for circuit simulation

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2023-12-21 DOI:10.1016/j.sse.2023.108849

Luigi Colalongo , Simone Comensoli , Anna Richelli

引用次数: 0

Abstract

This paper presents a new core compact model of double-gate (DGFET) and surrounding-gate (SGFET) MOSFETs for circuit simulations. The current and the terminal charges are continuous with high computation efficiency and accuracy. Despite its accuracy, it retains the same simplicity of the industry standard transistors models. The drain current is worked out without invoking the charge-sheet approximation exploiting a quadratic symmetric polynomial interpolation of the charge in the channel. Apart this clear approximation, no other simplification is used to work out the drain current, the terminal charges, the potential, and electric field in the channel. The accuracy of the model is shown by comparison with the exact numerical solution and experimental data of the literature.

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用于电路仿真的双栅极和环绕栅极 MOSFET 统一核心模型

本文提出了用于电路仿真的双栅（DGFET）和环绕栅（SGFET）MOSFET 的新型核心紧凑模型。电流和终端电荷是连续的，具有很高的计算效率和精度。尽管精度很高，但它仍然保持了行业标准晶体管模型的简洁性。利用沟道中电荷的二次对称多项式插值，在计算漏极电流时无需引用电荷片近似。除了这个清晰的近似值外，在计算漏极电流、沟道中的终端电荷、电势和电场时没有使用其他简化方法。通过与精确数值解法和文献中的实验数据进行比较，证明了该模型的准确性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.