Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics International Pub Date : 2022-06-10 DOI:10.1108/mi-03-2022-0042

Nur Atiqah Hamzah, Mohd Ann Amirul Zulffiqal Md Sahar, Aik Kwan Tan, Mohd Anas Ahmad, Muhammad Fadhirul Izwan Abdul Malik, Chin Chyi Loo, Wei Sea Chang, Sha Shiong Ng

{"title":"Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures","authors":"Nur Atiqah Hamzah, Mohd Ann Amirul Zulffiqal Md Sahar, Aik Kwan Tan, Mohd Anas Ahmad, Muhammad Fadhirul Izwan Abdul Malik, Chin Chyi Loo, Wei Sea Chang, Sha Shiong Ng","doi":"10.1108/mi-03-2022-0042","DOIUrl":null,"url":null,"abstract":"<h3>Purpose</h3>\n<p>This study aims to investigate the effects of indium composition on surface morphology and optical properties of indium gallium nitride on gallium nitride (InGaN/GaN) heterostructures.</p>\n<h3>Design/methodology/approach</h3>\n<p>The InGaN/GaN heterostructures were grown on flat sapphire substrates using a metal-organic chemical vapour deposition reactor with a trimethylindium flow rate of 368 sccm. The indium composition of the InGaN epilayers was controlled by applying different substrate temperatures. The surface morphology and topography were observed using field emission scanning electron microscope (F.E.I. Nova NanoSEM 450) and atomic force microscopy (Bruker Dimension Edge) with a scanning area of 10 µm × 10 µm, respectively. The compositional analysis was done by Energy Dispersive X-Ray Analysis. Finally, the ultraviolet-visible (UV-Vis) spectrophotometer (Agilent Technology Cary Series UV-Vis-near-infrared spectrometer) was measured from 200 nm to 1500 nm to investigate the optical properties of the samples.</p>\n<h3>Findings</h3>\n<p>The InGaN/GaN thin films have been successfully grown at three different substrate temperatures. The indium composition reduced as the temperature increased. At 760 C, the highest indium composition was obtained, 21.17%. This result was acquired from the simulation fitting of ω−2θ scan on (0002) plane using LEPTOS software by Bruker D8 Discover. The InGaN/GaN shows significantly different surface morphologies and topographies as the indium composition increases. The thickness of InGaN epilayers of the structure was ∼300 nm estimated from the field emission scanning electron microscopy. The energy bandgap of the InGaN was 2.54 eV – 2.79 eV measured by UV-Vis measurements.</p>\n<h3>Originality/value</h3>\n<p>It can be seen from this work that changes in substrate temperature can affect the indium composition. From all the results obtained, this work can be helpful towards efficiency improvement in solar cell applications.</p>","PeriodicalId":49817,"journal":{"name":"Microelectronics International","volume":null,"pages":null},"PeriodicalIF":0.7000,"publicationDate":"2022-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics International","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1108/mi-03-2022-0042","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Purpose

This study aims to investigate the effects of indium composition on surface morphology and optical properties of indium gallium nitride on gallium nitride (InGaN/GaN) heterostructures.

Design/methodology/approach

The InGaN/GaN heterostructures were grown on flat sapphire substrates using a metal-organic chemical vapour deposition reactor with a trimethylindium flow rate of 368 sccm. The indium composition of the InGaN epilayers was controlled by applying different substrate temperatures. The surface morphology and topography were observed using field emission scanning electron microscope (F.E.I. Nova NanoSEM 450) and atomic force microscopy (Bruker Dimension Edge) with a scanning area of 10 µm × 10 µm, respectively. The compositional analysis was done by Energy Dispersive X-Ray Analysis. Finally, the ultraviolet-visible (UV-Vis) spectrophotometer (Agilent Technology Cary Series UV-Vis-near-infrared spectrometer) was measured from 200 nm to 1500 nm to investigate the optical properties of the samples.

Findings

The InGaN/GaN thin films have been successfully grown at three different substrate temperatures. The indium composition reduced as the temperature increased. At 760 C, the highest indium composition was obtained, 21.17%. This result was acquired from the simulation fitting of ω−2θ scan on (0002) plane using LEPTOS software by Bruker D8 Discover. The InGaN/GaN shows significantly different surface morphologies and topographies as the indium composition increases. The thickness of InGaN epilayers of the structure was ∼300 nm estimated from the field emission scanning electron microscopy. The energy bandgap of the InGaN was 2.54 eV – 2.79 eV measured by UV-Vis measurements.

Originality/value

It can be seen from this work that changes in substrate temperature can affect the indium composition. From all the results obtained, this work can be helpful towards efficiency improvement in solar cell applications.

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铟成分对InGaN/GaN异质结构表面形貌和光学性质的影响

目的研究铟的组成对氮化镓(InGaN/GaN)异质结构的表面形貌和光学性质的影响。设计/方法/方法采用金属-有机化学气相沉积反应器，在368 sccm的三甲基linum流速下，在扁平蓝宝石衬底上生长InGaN/GaN异质结构。通过施加不同的衬底温度来控制InGaN脱膜中铟的组成。采用场发射扫描电子显微镜(F.E.I. Nova NanoSEM 450)和原子力显微镜(Bruker Dimension Edge)分别观察表面形貌和形貌，扫描面积为10µm × 10µm。成分分析采用能量色散x射线分析。最后，使用Agilent Technology Cary系列紫外-可见-近红外分光光度计(UV-Vis)在200 ~ 1500 nm范围内测量样品的光学性质。在三种不同的衬底温度下成功地生长了InGaN/GaN薄膜。铟成分随着温度的升高而降低。在760℃时，铟含量最高，为21.17%。这一结果是由Bruker D8 Discover利用LEPTOS软件对(0002)平面上的ω−2θ扫描进行模拟拟合得到的。随着铟含量的增加，InGaN/GaN表现出明显不同的表面形态和形貌。从场发射扫描电镜估计该结构的InGaN涂层厚度为~ 300 nm。通过UV-Vis测量，InGaN的能带隙为2.54 eV ~ 2.79 eV。独创性/价值从这项工作中可以看出，衬底温度的变化会影响铟的成分。从所获得的结果来看，这项工作有助于提高太阳能电池的应用效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics International 工程技术-材料科学：综合

CiteScore

1.90

自引率

9.10%

发文量

审稿时长

>12 weeks

期刊介绍： Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details. Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are: • Advanced packaging • Ceramics • Chip attachment • Chip on board (COB) • Chip scale packaging • Flexible substrates • MEMS • Micro-circuit technology • Microelectronic materials • Multichip modules (MCMs) • Organic/polymer electronics • Printed electronics • Semiconductor technology • Solid state sensors • Thermal management • Thick/thin film technology • Wafer scale processing.