Construction of Z-scheme 0D/2D In2O3/ZnIn2S4 nanocomposite for photocatalytic hydrogen peroxide production and its mechanism

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2023-11-18 DOI:10.1016/j.mssp.2023.107978

Shuang Liu, Yue Mao, Qiaofeng Han, Xiaoheng Liu

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引用次数: 0

Abstract

Photocatalytic production of hydrogen peroxide (H₂O₂) has gained significant attention as a sustainable technique in recent years. In this work, 0D/2D In₂O₃/ZnIn₂S₄ (ZISIO) Z-type heterojunction was successfully constructed using a calcination - solvothermal process,and its chemical composition, optical properties and photocatalytic mechanism were investigated. The In₂O₃/ZnIn₂S₄ nanocomposite photocatalysts exhibited excellent catalytic activity. After 100 min of visible light irradiation, the best performing sample (ZISIO60) showed the highest hydrogen peroxide concentration of 982.61 μmol L⁻¹ in the solution. The concentration exhibited a 3.44-fold and 44.22-fold increase in comparison to that of prepared In₂O₃ and ZnIn₂S₄, correspondingly. The active species capture experiment results and Electron Spin Resonance spectra demonstrated that photocatalytic hydrogen peroxide production pathway of the prepared heterojunctions was a two-step single-electron indirect oxygen reduction reaction. In conclusion, the reported In₂O₃/ZnIn₂S₄ heterojunctions exhibit considerable catalytic activity and provide a reliable strategy for photocatalytic hydrogen peroxide production via photocatalysis.

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光催化生产过氧化氢用Z-scheme 0D/2D In2O3/ZnIn2S4纳米复合材料的构建及其机理

近年来，光催化生产过氧化氢(H2O2)作为一种可持续发展的技术受到了广泛的关注。本文采用煅烧-溶剂热法成功构建了0D/2D In2O3/ZnIn2S4 (ZISIO) z型异质结，并对其化学组成、光学性质和光催化机理进行了研究。In2O3/ZnIn2S4纳米复合光催化剂表现出优异的催化活性。在可见光照射100 min后，ZISIO60溶液中过氧化氢浓度最高，达到982.61 μmol L−1。与制备的In2O3和ZnIn2S4相比，其浓度分别提高了3.44倍和44.22倍。活性物质捕获实验结果和电子自旋共振谱表明，所制备的异质结的光催化过氧化氢生成途径为两步单电子间接氧还原反应。综上所述，所报道的In2O3/ZnIn2S4异质结具有相当的催化活性，并为通过光催化生产过氧化氢提供了可靠的策略。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.