An Aging Small-Signal Equivalent Circuit Modeling Method for InP HBT

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-10-13 DOI:10.1109/TDMR.2023.3323899

Lin Cheng;Hongliang Lu;Silu Yan;Junjun Qi;Wei Cheng;Yuming Zhang;Yimen Zhang

引用次数: 0

Abstract

To predict the aging effect on indium phosphide (InP) heterojunction bipolar transistors (HBTs), an aging small-signal equivalent circuit modeling method is proposed in this paper, with special attention to the degradation of the key small-signal model parameters of the InP HBTs in aging experiments. Based on the analysis of the aging sensitivity of the complete small-signal equivalent circuit parameters, semi-empirical approach is used to model the degradation of the key parameters in bipolar transistors as a function of stress magnitude and stress time. Its validity and accuracy are demonstrated by comparison of the modeled and measured results for InP HBTs before and after degradation.

查看原文本刊更多论文

InP HBT老化小信号等效电路建模方法

为了预测磷化铟(InP)异质结双极晶体管(HBTs)的老化效应，本文提出了一种老化小信号等效电路建模方法，特别关注了老化实验中InP双极晶体管关键小信号模型参数的退化。在分析完整小信号等效电路参数老化敏感性的基础上，采用半经验方法建立了双极晶体管关键参数随应力大小和应力时间退化的模型。通过对InP HBTs降解前后模型和实测结果的比较，验证了该方法的有效性和准确性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.