{"title":"Multi-Scale and Multi-Branch Transformer Network for Remaining Useful Life Prediction in Ion Mill Etching Process","authors":"Zengwei Yuan;Rui Wang","doi":"10.1109/TSM.2023.3324057","DOIUrl":null,"url":null,"abstract":"Accurate prediction of the remaining useful life (RUL) of an ion mill is vital for optimizing the overall performance of the ion mill etching (IME) process. However, due to the uneven distribution of important information, and the poorly understood failure mechanisms, fault prognosis in this process presents significant challenges. Deep neural networks have shown promising results for extracting, without domain knowledge, relevant features from condition monitoring data. This study proposes a multi-scale and multi-branch Transformer network based on the vanilla Transformer to predict the RUL of ion mills. To extract features on various scales, multi-scale feature extraction first generates receptive fields of various sizes, which are then integrated to obtain feature representations. The multi-branch Transformer uses the parallel attention mechanism and long short-term memory (LSTM) to capture both the adjacent location information and the crucial information of a given timestamp. Handcrafted features are also incorporated as additional input to enhance the prediction accuracy of the model. The proposed model is evaluated on a dataset from a semiconductor IME process. The experimental results demonstrate that the proposed model outperforms other deep neural network and further highlight the practical feasibility of the proposed method.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"37 1","pages":"67-75"},"PeriodicalIF":2.3000,"publicationDate":"2023-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Semiconductor Manufacturing","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10283993/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Accurate prediction of the remaining useful life (RUL) of an ion mill is vital for optimizing the overall performance of the ion mill etching (IME) process. However, due to the uneven distribution of important information, and the poorly understood failure mechanisms, fault prognosis in this process presents significant challenges. Deep neural networks have shown promising results for extracting, without domain knowledge, relevant features from condition monitoring data. This study proposes a multi-scale and multi-branch Transformer network based on the vanilla Transformer to predict the RUL of ion mills. To extract features on various scales, multi-scale feature extraction first generates receptive fields of various sizes, which are then integrated to obtain feature representations. The multi-branch Transformer uses the parallel attention mechanism and long short-term memory (LSTM) to capture both the adjacent location information and the crucial information of a given timestamp. Handcrafted features are also incorporated as additional input to enhance the prediction accuracy of the model. The proposed model is evaluated on a dataset from a semiconductor IME process. The experimental results demonstrate that the proposed model outperforms other deep neural network and further highlight the practical feasibility of the proposed method.
准确预测离子研磨机的剩余使用寿命(RUL)对于优化离子研磨蚀刻(IME)工艺的整体性能至关重要。然而,由于重要信息的分布不均以及对故障机制的了解甚少,该工艺中的故障预测面临着巨大挑战。深度神经网络在无需领域知识的情况下从状态监测数据中提取相关特征方面取得了可喜的成果。本研究提出了一种基于香草变压器的多尺度、多分支变压器网络,用于预测离子磨的 RUL。为了提取不同尺度的特征,多尺度特征提取首先会生成不同大小的感受野,然后对感受野进行整合以获得特征表示。多分支变换器使用并行注意机制和长短期记忆(LSTM)来捕捉相邻位置信息和给定时间戳的关键信息。此外,还将手工制作的特征作为额外输入,以提高模型的预测准确性。我们在半导体 IME 过程的数据集上对所提出的模型进行了评估。实验结果表明,所提出的模型优于其他深度神经网络,并进一步突出了所提出方法的实用可行性。
期刊介绍:
The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.