Mechanistic analysis on low temperature thermal atomic layer deposition of nitrides utilizing H2S

IF 2.4 3区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS
Jinwoo Lee, Soo Hyun Lee, Bonggeun Shong
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引用次数: 0

Abstract

Atomic layer deposition (ALD) enables the deposition of thin films with excellent step coverage and conformality that are required for nanoscale semiconductor devices. For ALD of nitrides, the high thermal budget required to eliminate impurities in the deposited films is often an issue. Recently, an alternative three-step recipe for thermal ALD of nitrides is reported to simultaneously decrease both the deposition temperature and the impurity contamination, by introducing H2S between chloride precursors and NH3 reactants. In this study, a theoretical analysis is conducted on comparing direct versus three-step alternative reaction paths for thermal ALD of nitrides using density functional theory calculations. The introduction of H2S would enhance the ligand-exchange reaction for nitrides of Al, Ti, and Zr by modifying the reaction scheme to involve a greater number of steps for each lower activation energy required. However, SiN ALD is expected to be hindered by H2S. Our study may be utilized for the development of a new efficient method for ALD of nitride thin films at lower process temperatures.
利用H2S低温热原子层沉积氮化物的机理分析
原子层沉积(ALD)能够沉积纳米级半导体器件所需的具有优异步长覆盖和一致性的薄膜。对于氮化物ALD,消除沉积膜中杂质所需的高热收支通常是一个问题。最近,有报道称,通过在氯化物前驱体和NH3反应物之间引入H2S,可以同时降低沉积温度和杂质污染。在本研究中,利用密度泛函理论计算对氮化物热ALD的直接和三步替代反应路径进行了理论分析。H2S的引入将通过改变反应方案,使每降低活化能所需的步骤数增加,从而增强Al, Ti和Zr氮化物的配体交换反应。然而,H2S可能会阻碍SiN ALD的发展。本研究为在较低工艺温度下制备氮化薄膜ALD提供了一种新的有效方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A 工程技术-材料科学:膜
CiteScore
5.10
自引率
10.30%
发文量
247
审稿时长
2.1 months
期刊介绍: Journal of Vacuum Science & Technology A publishes reports of original research, letters, and review articles that focus on fundamental scientific understanding of interfaces, surfaces, plasmas and thin films and on using this understanding to advance the state-of-the-art in various technological applications.
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