Resistor-less power-rail ESD clamp circuit design with adjustable NMOS gate biased voltage

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2023-10-18 DOI:10.1088/1361-6641/ad01d3

Shuang Li, Yang Wang, Hongke Tao, Qing Liu, Zhiwen Zeng, Xiangliang Jin, Hongjiao Yang

引用次数: 0

Abstract

Abstract Based on the 0.18 μ m CMOS process, proposed a new power-rail electrostatic discharge clamp circuit. The proposed circuit can adjust the voltage biased to the big clamp NMOS (M big ) gate by adjusting the width of one MOS transistor, and the feedback path is designed to prolong the response time of M big . The simulation results demonstrated that the voltage biased to the M big of the proposed circuit has a relatively steady state and the M big has a longer response time, which can effectively reduce the damage to the gate oxide layer of the M big with large voltage overshoot. The transmission line pulse test results show that compared to the M big of the conventional circuit, the M big of the proposed circuit has higher trigger voltage, lower on-resistance, and better robustness.

查看原文本刊更多论文

具有可调NMOS栅极偏压的无电阻电源轨ESD钳位电路设计

摘要基于0.18 μ m CMOS工艺，提出了一种新的电源导轨静电放电箝位电路。该电路通过调节一个MOS晶体管的宽度来调节大钳位NMOS (M big)栅极的偏置电压，并设计了延长M big响应时间的反馈路径。仿真结果表明，该电路偏置于M大的电压具有相对稳定的状态，且M大具有较长的响应时间，可以有效地减少对电压超调较大的M大栅极氧化层的破坏。传输线脉冲测试结果表明，与传统电路的M big相比，该电路的M big具有更高的触发电压、更低的导通电阻和更好的鲁棒性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.