Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-09-18 DOI:10.1109/TDMR.2023.3316928

Renze Yu;Saeed Jahdi;Olayiwola Alatise;Jose Ortiz-Gonzalez;Sai Priya Munagala;Nick Simpson;Phil Mellor

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引用次数: 0

Abstract

The reliability of the SiC MOSFET has always been a factor hindering the device application, especially under high voltage and high current conditions, such as in the short circuit events. This paper experimentally reviews the failure mechanisms caused by destructive short circuit impulses, and investigates the degradation patterns of key electrical parameters under repetitive short circuit events. The impact of test parameters on the short circuit reliability of SiC MOSFET has been analyzed. Approaches to characterize the electrical-thermal-mechanical stress during the short circuit period and advanced test methods are highlighted. Finally, the constraints from the standpoint of both manufacturers and users have been presented, including comparison of current SiC MOSFET devices, reliability evaluation of parallel SiC MOSFET devices, reliability improvement of the chip, performance improvement of protection circuits, and reliability assessment of SiC MOSFET devices under application-representative stress.

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短路事件下4H-SiC功率mosfet失效机制及可靠性约束的测量与评述

SiC MOSFET的可靠性一直是阻碍器件应用的一个因素，特别是在高电压和大电流条件下，例如在短路事件中。本文通过实验综述了破坏性短路脉冲的失效机制，并研究了重复短路事件下关键电气参数的退化规律。分析了测试参数对SiC MOSFET短路可靠性的影响。重点介绍了表征短路时电-热-机械应力的方法和先进的测试方法。最后，从制造商和用户的角度提出了限制条件，包括现有SiC MOSFET器件的比较，并行SiC MOSFET器件的可靠性评估，芯片的可靠性改进，保护电路的性能改进以及SiC MOSFET器件在应用代表性应力下的可靠性评估。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.