An 11-Level Adiabatic Ultrasonic Pulser Achieving 87.2% Dynamic Power Reduction

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Sandeep Reddy Kukunuru;Loai G. Salem
{"title":"An 11-Level Adiabatic Ultrasonic Pulser Achieving 87.2% Dynamic Power Reduction","authors":"Sandeep Reddy Kukunuru;Loai G. Salem","doi":"10.1109/LSSC.2023.3326087","DOIUrl":null,"url":null,"abstract":"This letter introduces a pulser topology that allows switched-capacitor adiabatic drivers (SCADs) to exploit an H-bridge for doubling the output voltage swing across an ultrasonic transducer (UT) from \n<inline-formula> <tex-math>$V_{DD}$ </tex-math></inline-formula>\n to \n<inline-formula> <tex-math>$2V_{DD}$ </tex-math></inline-formula>\n. The topology enables a fourfold increase in the output power of an \n<inline-formula> <tex-math>$N$ </tex-math></inline-formula>\n-step SCAD while reducing the switching loss of the internal capacitance of a UT by \n<inline-formula> <tex-math>$\\sim 10\\times $ </tex-math></inline-formula>\n. A periodically switched flying ladder of capacitors is employed to balance the voltages across the \n<inline-formula> <tex-math>$N -1$ </tex-math></inline-formula>\n charge-recycling capacitors in an \n<inline-formula> <tex-math>$N$ </tex-math></inline-formula>\n-step SCAD at integer multiples of \n<inline-formula> <tex-math>$V_{DD}/N$ </tex-math></inline-formula>\n against the imbalance produced by an H-bridge or a UT of high power factor. In this way, an H-bridge can be combined with an SCAD to flip the polarity of the voltage applied across a UT every half cycle, effectively lowering the number of required charge-recycling capacitors and intermediate switches for a given number of steps by 2. Measurements of a 0.18-\n<inline-formula> <tex-math>$\\mu \\text{m}$ </tex-math></inline-formula>\n CMOS prototype demonstrate a switching loss reduction of up to 87.2% and a peak ultrasonic driving efficiency of 92.9%.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"6 ","pages":"281-284"},"PeriodicalIF":2.2000,"publicationDate":"2023-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10288150/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0

Abstract

This letter introduces a pulser topology that allows switched-capacitor adiabatic drivers (SCADs) to exploit an H-bridge for doubling the output voltage swing across an ultrasonic transducer (UT) from $V_{DD}$ to $2V_{DD}$ . The topology enables a fourfold increase in the output power of an $N$ -step SCAD while reducing the switching loss of the internal capacitance of a UT by $\sim 10\times $ . A periodically switched flying ladder of capacitors is employed to balance the voltages across the $N -1$ charge-recycling capacitors in an $N$ -step SCAD at integer multiples of $V_{DD}/N$ against the imbalance produced by an H-bridge or a UT of high power factor. In this way, an H-bridge can be combined with an SCAD to flip the polarity of the voltage applied across a UT every half cycle, effectively lowering the number of required charge-recycling capacitors and intermediate switches for a given number of steps by 2. Measurements of a 0.18- $\mu \text{m}$ CMOS prototype demonstrate a switching loss reduction of up to 87.2% and a peak ultrasonic driving efficiency of 92.9%.
一种11级绝热超声脉冲发生器,动态功率降低87.2%
本文介绍了一种脉冲发生器拓扑结构,该拓扑结构允许开关电容绝热驱动器(scad)利用h桥将超声波换能器(UT)从$V_{DD}$到$2V_{DD}$的输出电压摆幅加倍。该拓扑结构使$N$ -step SCAD的输出功率增加四倍,同时将UT内部电容的开关损耗降低$\sim 10\times $。在$N$级SCAD中,采用周期性切换的电容器飞梯来平衡$N -1$电荷回收电容器之间的电压,其电压为$V_{DD}/N$的整数倍,以对抗h桥或高功率因数UT产生的不平衡。通过这种方式,h桥可以与SCAD相结合,每半个周期翻转施加在UT上的电压的极性,有效地将给定数量的步骤所需的电荷回收电容器和中间开关的数量减少2。测量0.18- $\mu \text{m}$ CMOS原型表明开关损耗降低高达87.2% and a peak ultrasonic driving efficiency of 92.9%.
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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