Plasma-induced charge damage and its effect on reliability in 0.115-/spl mu/m technology

2003 8th International Symposium Plasma- and Process-Induced Damage. Pub Date : 2003-04-24 DOI:10.1109/PPID.2003.1200917

E. Li, D. Pachura, L. Duong, S. Prasad, D. Vijay

引用次数: 1

Abstract

Plasma-induced damage on 0.115 /spl mu/m Cu dual damascene technology devices is investigated. The metal-via-metal structure shows more plasma damage than other metal structures. Plasma damage has little impact on NMOSFET hot carrier degradation. For PMOSFET NBTI degradation, the plasma damage on thick oxide is clearly observed.

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等离子体诱导电荷损伤及其对0.115-/spl mu/m技术可靠性的影响

研究了0.115 /spl mu/m Cu双损伤技术器件的等离子体损伤。金属过金属结构比其他金属结构表现出更大的等离子体损伤。等离子体损伤对NMOSFET热载流子降解影响不大。对于PMOSFET的NBTI降解，可以清楚地观察到厚氧化物上的等离子体损伤。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2003 8th International Symposium Plasma- and Process-Induced Damage.

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