A method for reducing complex MOS structures in switch level simulators

Abstract

A new method is proposed for simplifying complex MOS structures in switch level simulators. It is shown that the well known technique of circuit analysis can be applied to the shape factor "S" of different MOS transistors. This allows an equivalent transistor strength to be easily computed. The obtained results are applicable to both NMOS and CMOS structures. Examples are given to illustrate the use of the method.