InGaAs nanowire MOSFETs with ION = 555 µA/µm at IOFF = 100 nA/µm and VDD = 0.5 V

Abstract

We report on In_0.85Ga_0.15As nanowire MOSFETs (NWFETs) with record performance in several key VLSI metrics. These devices exhibit I_ON = 555 μA/μm (at I_OFF = 100 nA/μm and V_DD = 0.5 V), I_ON = 365 μA/μm (at I_OFF = 10 nA/μm and V_DD = 0.5 V) and a quality factor Q = g_m/SS of 40, all of which are the highest reported for a III-V as well as silicon transistor. Furthermore, a highly scalable, self-aligned gate-last fabrication process is utilized, with a single nanowire as the channel. The devices use a 45° angle between the nanowire and the contacts, which allows for up to a 1.4 times longer gate length at a given pitch.