Meng-Chun Shih, Chia-Yu Wang, Yung-Huei Lee, Wayne Wang, L. Thomas, Huanlong Liu, Jian Zhu, Yuan-Jen Lee, G. Jan, Yu-Jen Wang, T. Zhong, T. Torng, P. Wang, D. Lin, T. Chiang, K. Shen, H. Chuang, W. Gallagher
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引用次数: 17
Abstract
A comprehensive reliability analysis of perpendicular Spin-Transfer-Torque Magnetic Random Access Memory (pSTT-MRAM) is demonstrated that pSTT-MRAM is capable of fast write, more than 107 cycles endurance, less than 10-20 read disturb error rate at 125°C, and 10 years data retention up to 225°C at chip level. Furthermore, we prove for the first time that pSTT-MRAM technology can withstand reflow soldering at 260°C, thus enabling the opportunity for embedded nonvolatile memories in consumer and automotive Microcontrollers (MCUs) applications.
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