Two-dimensional numerical simulation of the channel electron in an In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMT

1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI:10.1109/HKEDM.1997.642345

X.H. Zhang, Y.F. Yang, Z.G. Wang

引用次数: 1

Abstract

A two-dimensional quantum model based on the solution of the Schrodinger and Poisson equations is first presented for an In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HEMT. According to the model, the two-dimensional distributions of electron density and transverse electric field in the channel of the InAlAs/InGaAs HEMT are discussed.

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in /sub 0.52/Al/sub 0.48/As/ in /sub 0.53/Ga/sub 0.47/As HEMT中通道电子的二维数值模拟

首先给出了In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HEMT的二维量子模型，该模型基于薛定谔和泊松方程的解。根据该模型，讨论了InAlAs/InGaAs HEMT通道内电子密度和横向电场的二维分布。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

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