{"title":"Comparison of bulk and SOI CMOS technologies in a DSP processor circuit implementation","authors":"","doi":"10.1109/ICM.2001.997499","DOIUrl":null,"url":null,"abstract":"Silicon-on-insulator (SOI) CMOS technologies are very attractive options for implementing high-speed digital integrated circuits for low-power applications. This paper presents the layout migration of a DSP processor chip from a 0.6 /spl mu/m bulk CMOS to a 0.5 /spl mu/m SOI CMOS technology. The layout migration and verification are described and the two CMOS designs are compared using two main criteria: circuit speed and average power consumption. For nominal supply voltages, the simulations suggest that the SOI circuit can operate at a speed of 98 MHz which is 51 % higher than that of the original (65 MHz). The average power consumption is 35 % lower in the SOI circuit by using 3.3 V and 35 MHz for both SOI and bulk CMOS designs.","PeriodicalId":360389,"journal":{"name":"ICM 2001 Proceedings. The 13th International Conference on Microelectronics.","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICM 2001 Proceedings. The 13th International Conference on Microelectronics.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2001.997499","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19
Abstract
Silicon-on-insulator (SOI) CMOS technologies are very attractive options for implementing high-speed digital integrated circuits for low-power applications. This paper presents the layout migration of a DSP processor chip from a 0.6 /spl mu/m bulk CMOS to a 0.5 /spl mu/m SOI CMOS technology. The layout migration and verification are described and the two CMOS designs are compared using two main criteria: circuit speed and average power consumption. For nominal supply voltages, the simulations suggest that the SOI circuit can operate at a speed of 98 MHz which is 51 % higher than that of the original (65 MHz). The average power consumption is 35 % lower in the SOI circuit by using 3.3 V and 35 MHz for both SOI and bulk CMOS designs.