Performance and reliability concerns of ultra-thin SOI and ultra-thin gate oxide MOSFETs

Abstract

Inversion layer mobility in thin SOI MOSFETs has been investigated from the viewpoint of the SOI thickness effects on device performance. Next, thin oxide properties such as Qbd, Vgt, Dit, and SILC have been studied as a function of oxide thickness. It is demonstrated that there is a small window for high reliability in ultra-thin SiO/sup 2/ regime.