Y. Morand, M. Assous, P. Berruyer, M. Cochet, O. Demolliens, M. Fayolle, D. Louis, G. Passemard, A. Roman, C. Verove, Y. Trouiller
{"title":"Copper dual damascene integration using organic low k material: construction architecture comparison","authors":"Y. Morand, M. Assous, P. Berruyer, M. Cochet, O. Demolliens, M. Fayolle, D. Louis, G. Passemard, A. Roman, C. Verove, Y. Trouiller","doi":"10.1109/IITC.2000.854332","DOIUrl":null,"url":null,"abstract":"This paper presents three integration schemes of copper with a pure organic low k material (SiLK/sup TM/, Dow Chemical Co., k=2.8). We will compare two trench first architectures, leading to a self or not self aligned structure, with the more conventional self aligned \"Via First at Via Level\" structure. The limitations of the self aligned structures are discussed by comparison with results obtained with SiO2.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"179 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2000.854332","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents three integration schemes of copper with a pure organic low k material (SiLK/sup TM/, Dow Chemical Co., k=2.8). We will compare two trench first architectures, leading to a self or not self aligned structure, with the more conventional self aligned "Via First at Via Level" structure. The limitations of the self aligned structures are discussed by comparison with results obtained with SiO2.