Fault models and test methods for subthreshold SRAMs

Chen-Wei Lin, Hung-Hsin Chen, Hao-Yu Yang, M. Chao, Rei-Fu Huang
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引用次数: 8

Abstract

Due to the increasing demand of an extra-low-power system, a great amount of research effort has been spent in the past to develop an effective and economic subthreshold-SRAM design. However, the test methods regarding those newly developed subthreshold-SRAM designs have not yet been fully discussed. In this paper, we first categorize the subthreshold-SRAM designs into three types, study the faulty behavior of different open defects for each type of designs, and then identify the faults which may or may not be covered by a traditional SRAM test method. For those hard-to-detect faults, we will further discuss the corresponding test method according to different each type of subthreshold-SRAM designs. At last, a discussion about the temperature at test will also be provided.
亚阈值sram的故障模型和测试方法
由于对超低功耗系统的需求不断增加,过去已经花费了大量的研究工作来开发有效且经济的亚阈值sram设计。然而,关于这些新开发的亚阈值sram设计的测试方法尚未得到充分的讨论。本文首先将亚阈值SRAM设计分为三种类型,研究了每种类型设计的不同开放缺陷的故障行为,然后识别出传统SRAM测试方法可能覆盖或可能无法覆盖的故障。对于难以检测的故障,我们将根据不同类型的亚阈值sram设计进一步讨论相应的测试方法。最后,对试验温度进行了讨论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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