Direct bonding of GaN and Si substrates using wet cleaning processes

Abstract

Gallium nitride (GaN) substrate was directly bonded with silicon substrate using a sequential wet treatment consisting of H2SO4/H2O2 and NH3/H2O2 mixtures under atmospheric conditions. The bonding strength of the bonded substrates annealed at 300 °C reached up to 6.98 MPa. This study contributes to the development for GaN-based integrated devices.