Steep slope 2D negative capacitance CMOS devices: MoS2 and WSe2

Abstract

This work reports steep slope sub-thermionic negative capacitance CMOS devices with 2D semiconductors as channel materials and ferroelectric hafnium zirconium oxide in the gate stack. Both n-type and p-type negative capacitance FETs are realized with MoS2 as n-type channel material and WSe2 as p-type channel material. Bidirectional sub-60 mV/dec at room temperature is achieved on both MoS2 and WSe2 negative capacitance FETs. The impact of internal metal gate on the performance of 2D negative capacitance FETs are also studied and compared with internal FETs.