Advanced π-FET Technology for 45 nm Technology Node

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2007-07-11 DOI:10.1109/IPFA.2007.4378081

Y. Eng, Jyi-Tsong Lin

引用次数: 2

Abstract

In this study, the enhancement of pi-FET performance using optimized parameters is designed to investigate the electrical characteristics as a function of the BOI length (LBOI) under the body region. Additionally, the SOI devices (FDSOI-FET and UTBSOI-FET) are also designed for the comparison with the pi-FET by using ISE TCAD tools.

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45纳米节点先进π-FET技术

在本研究中，使用优化参数增强pi-FET性能，旨在研究电特性作为身体区域下BOI长度(LBOI)的函数。此外，还设计了SOI器件(FDSOI-FET和UTBSOI-FET)，以便通过使用ISE TCAD工具与pi-FET进行比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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