Thermal simulation and measurement of SiC MOSETs

Abstract

This paper shows that thermal characterization of SiC MOSFETs module using the thermal transient measurement method, simulation, and calibration. To determine the thermal resistance values of the junction-to-case (RthJ-C), the JEDEC JESD 51-14 transient dual interface measurement method is a well-known and industry-wide accepted technique. In this article we also show a thermal model calibration tasks using transient thermal measurement for even more accurate thermal simulations and improve the reliability of components. The ability to find a measurable structure allows us to create a simulation model of the package and calibrate it against the measured thermal signal. The calibration process started with a thermal transient test to obtain the behavior of the selected semiconductor component, in our case the average temperature on the volume region of die. Important calibration parameters we investigated was the absolute size of die, thermal conductivity of die attach solder, substrate, ceramic, cold plate and contact resistance of base plate and cold plate. Calibrated structure function of SiC Schottky diode had matched with measured structure function with accuracy 99.89 % and calibration extent 0.85 K/W.