Channel dopant profile and Leff extraction of deep submicron MOSFETs by inverse modeling

Abstract

For process modeling of deep submicron MOSFETs, information on dopant profile is very important to ensure a simulation accuracy. In this paper, we report a new method to extract channel dopant profile and an effective channel length (Leff) of actual device from measured I-V characteristics, and the accuracy of this method confirmed by simulation. In comparison to the capacitance values measured in C-V method, measured current values are accurate even in conventional narrow width MOSFETs. No special devices are necessary in this method. Also noted is that only one device to be measured is necessary to extract its channel dopant profile and Leff, which contrasts other methods to extract Leff by a series of MOSFETs with different channel lengths.