A 40 volt silicon complementary bipolar technology for high-precision and high-frequency analog circuits

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI:10.1109/BIPOL.1994.587900

R. Bashir, J. De Santis, D. Chen, F. Hébert, A. Ramde, P. Maghsoudnia, H. You, P. Meng, F. Moraveji, R. Razouk

引用次数: 12

Abstract

A high performance and low cost complementary bipolar technology has been developed for the realization of high-precision and high-frequency analog circuits. The technology, referred to as VIP-3 (Vertically Integrated PNP-3), offers transistors with typical BV/sub ceo/ of NPN and PNP transistors at 45 and 60 volts, respectively. In addition, the technology offers BV/sub ceo//spl times/f/sub t//h/sub fe//spl times/Va figures of merit in excess of 135 GHz/spl middot/V/20,000 V for NPN and 130 GHz/spl middot/V/6,500 V for PNP.

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用于高精度和高频模拟电路的40伏硅互补双极技术

为实现高精度、高频模拟电路，开发了一种高性能、低成本的互补双极技术。该技术被称为VIP-3(垂直集成PNP-3)，提供的晶体管分别具有45伏和60伏的NPN和PNP晶体管的典型BV/sub - ceo/。此外，该技术为NPN提供了超过135 GHz/spl middot/V/20,000 V和130 GHz/spl middot/V/6,500 V的BV/sub ceo//spl times/f/sub t//h/sub fe//spl times/Va的优点数字。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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