Cu / Barrier Metal Stack Film Characterization for Reliability Estimation

2007 IEEE International Interconnect Technology Conferencee Pub Date : 2007-06-04 DOI:10.1109/IITC.2007.382339

S. Ogawa, T. Ohdaira, N. Hosoi, N. Tarumi, R. Suzuki, S. Saito

引用次数: 3

Abstract

Elapsed time change in sheet resistance (SR) of Cu/barrier metal stacks have been evaluated correlated with behaviors of vacancies in Cu films at Cu/barrier interface areas (Cu barrier interfaces) by a positron-annihilation lifetime spectroscopy (PALS), and it was shown that the elapsed time change in SR strongly related to positron mean lifetime, namely vacancy clusters size, and those film properties showed a reasonable correlation with a reported SIV characteristics.

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用于可靠性估计的铜/障碍金属堆叠薄膜表征

利用正电子湮没寿命谱(PALS)研究了Cu/势垒金属堆的薄片电阻(SR)经过时间变化与Cu/势垒界面区(Cu势垒界面)Cu薄膜中空位行为的相关性，结果表明，SR的经过时间变化与正电子平均寿命(即空位团簇大小)密切相关，并且这些薄膜性能与所报道的SIV特性具有合理的相关性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 IEEE International Interconnect Technology Conferencee

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