Adding Manufacturability to the Quality of Results

R. Camposano
{"title":"Adding Manufacturability to the Quality of Results","authors":"R. Camposano","doi":"10.1109/ISQED.2006.21","DOIUrl":null,"url":null,"abstract":"Traditionally, IC designers have been able to define \"Quality of Results\" (QoR) primarily in terms of functionality, area, speed, and power. Hardly a backward glance was given to what manufacturers would do once the designs were handed off to them. Today, manufacturability has clearly joining the ranks of QoR. This is particularly true for technology nodes at 65 nanometers (nm) and below. Yield loss mechanisms, both functional and parametric, have become dependant on the design and increasingly, as geometries continue to shrink to 45nm and below, must be addressed from design to lithography to process. In this talk, we will examine some solutions being used to ensure quality in this area of concern. Topics include incorporating yield-rated cells and probabilistic methods such as statistical timing analysis to address yield losses early in the design. Test is being used for diagnosis. Routing optimization techniques such as minimizing critical areas for shorts and open circuits, wire-spreading, redundant vias and dummy metal fills improve manufacturability for metal layers. Further down the tool chain, resolution enhancement techniques (RET) used in mask synthesis addresses lithography, improving printability and hence yield. Manufacturing process knowledge is becoming increasingly important in design to enable effective yield modeling. TCAD models are making their way into manufacturing, helping, for example, to simulate statistical variations of electrical parameters as a function of process parameters.","PeriodicalId":138839,"journal":{"name":"7th International Symposium on Quality Electronic Design (ISQED'06)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"7th International Symposium on Quality Electronic Design (ISQED'06)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2006.21","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Traditionally, IC designers have been able to define "Quality of Results" (QoR) primarily in terms of functionality, area, speed, and power. Hardly a backward glance was given to what manufacturers would do once the designs were handed off to them. Today, manufacturability has clearly joining the ranks of QoR. This is particularly true for technology nodes at 65 nanometers (nm) and below. Yield loss mechanisms, both functional and parametric, have become dependant on the design and increasingly, as geometries continue to shrink to 45nm and below, must be addressed from design to lithography to process. In this talk, we will examine some solutions being used to ensure quality in this area of concern. Topics include incorporating yield-rated cells and probabilistic methods such as statistical timing analysis to address yield losses early in the design. Test is being used for diagnosis. Routing optimization techniques such as minimizing critical areas for shorts and open circuits, wire-spreading, redundant vias and dummy metal fills improve manufacturability for metal layers. Further down the tool chain, resolution enhancement techniques (RET) used in mask synthesis addresses lithography, improving printability and hence yield. Manufacturing process knowledge is becoming increasingly important in design to enable effective yield modeling. TCAD models are making their way into manufacturing, helping, for example, to simulate statistical variations of electrical parameters as a function of process parameters.
将可制造性添加到结果质量中
传统上,IC设计人员能够主要根据功能、面积、速度和功耗来定义“结果质量”(QoR)。几乎没有人回过头去想,一旦设计交给制造商,他们会怎么做。今天,可制造性显然已经加入了QoR的行列。对于65纳米及以下的技术节点来说尤其如此。由于几何尺寸不断缩小至45nm及以下,从设计到光刻再到工艺,产率损失机制(包括功能损耗机制和参数损耗机制)都越来越依赖于设计。在这次演讲中,我们将研究一些用于确保这一领域的质量的解决方案。主题包括纳入产量等级单元和概率方法,如统计时序分析,以解决在设计早期的产量损失。测试被用于诊断。布线优化技术,如最小化短路和开路、导线扩展、冗余过孔和假金属填充的关键区域,提高了金属层的可制造性。在工具链的下游,用于掩模合成的分辨率增强技术(RET)解决了光刻问题,提高了可印刷性,从而提高了产量。制造工艺知识在设计中变得越来越重要,以实现有效的产量建模。TCAD模型正在进入制造业,例如,帮助模拟作为工艺参数函数的电气参数的统计变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信