The pn-junction as an inductive design component in silicon IC processes

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting Pub Date : 1995-10-02 DOI:10.1109/BIPOL.1995.493880

G. Hurkx, P. Baltus, J.A.M. de Boet, J.A.M. Geelen, J. Hageraats

引用次数: 0

Abstract

pn-Junctions in IC processes are investigated for the use as an inductive design component. Measurements of inductance, quality factor and noise under avalanche breakdown conditions are compared to device simulations and the theory for IMPATT diodes. Inhomogeneous breakdown is also investigated.

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在硅集成电路工艺中，pn结是一种电感设计元件

研究了集成电路工艺中用作电感设计元件的pn结。对雪崩击穿条件下的电感、品质因数和噪声进行了测量，并与IMPATT二极管的器件仿真和理论进行了比较。对非均匀击穿也进行了研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of Bipolar/Bicmos Circuits and Technology Meeting

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