Muon-induced soft errors in 16-nm NAND flash memories

M. Bagatin, S. Gerardin, A. Paccagnella, A. Visconti, S. Beltrami, M. Bertuccio, K. Ishida, C. Frost, A. Hillier, V. Ferlet-Cavrois
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引用次数: 4

Abstract

Flash memories based on the floating gate architecture are sensitive to ionizing radiation at sea level, including atmospheric neutrons and alpha particles. No data are available on the sensitivity of Flash memories to muons. These particles, although very lightly ionizing, are the most abundant at sea level and have been reported to cause upsets in advanced SRAMs through direct ionization. The purpose of this contribution is to present the first experimental investigation of single event upsets induced by muons in 16-nm NAND Flash memories, using accelerated tests. The experimental results are discussed in terms of threshold voltage shifts and raw bit errors and the threshold LET values are analyzed for advanced samples. We show that muon-induced upsets are indeed possible also in Flash memories, even though the error rate is very low and ECC can easily cope with it.
16纳米NAND闪存中介子诱导的软误差
基于浮栅结构的闪存对海平面电离辐射敏感,包括大气中子和α粒子。目前还没有关于闪存对μ介子的敏感性的数据。这些粒子虽然电离程度很轻,但在海平面上最为丰富,据报道,它们通过直接电离在先进的sram中引起扰动。这一贡献的目的是提出第一个实验研究由16纳米NAND闪存中的μ介子引起的单事件扰动,使用加速测试。从阈值电压偏移和原始比特误差两个方面讨论了实验结果,并对超前采样的阈值LET值进行了分析。我们表明,即使错误率非常低,ECC可以很容易地处理它,μ子诱导的扰动也确实可能在闪存中存在。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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