{"title":"NGL Overview","authors":"B. Lin","doi":"10.1109/vtsa.2009.5159306","DOIUrl":null,"url":null,"abstract":"ArF water-immersion lithography supports 1.35 NA or slightly higher but cannot reach the theoretical limit of 1.44 NA. It is increasing difficult to resolve half pitches below k1=(HP/λ)*NA=0.28, i.e. 40-nm half pitch.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vtsa.2009.5159306","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
ArF water-immersion lithography supports 1.35 NA or slightly higher but cannot reach the theoretical limit of 1.44 NA. It is increasing difficult to resolve half pitches below k1=(HP/λ)*NA=0.28, i.e. 40-nm half pitch.