Single Event Effects Characterization of TI ADS1282-SP High Resolution ADC

2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI:10.1109/NSREC.2016.7891737

S. Narayanan, W. Vonbergen, J. Cruz-Colon, V. Narayanan

引用次数: 1

Abstract

The single event effects behavior of the ADS1282- SP, a high dynamic range ADC, are presented. No latch up events were detected up to an LET of 50.5 MeV.cm2/mg at 85 °C and 125 °C. No latch up events detected up to an LET of 60.4 MeV.cm2/mg at 85 °C.

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TI ADS1282-SP高分辨率ADC的单事件效应表征

介绍了高动态范围ADC ADS1282- SP的单事件效应特性。在50.5 MeV的LET下没有检测到闩锁事件。cm2/mg在85 °C和125 °没有锁存事件检测到高达60.4 MeV的LET。cm2/mg 85 °

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE Radiation Effects Data Workshop (REDW)

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