Reliability of a GaAs MMIC process based on 0.5 /spl mu/m Au/Pd/Ti gate MESFETs

Abstract

In a cooperative Supplier/Customer program, qualification testing was completed on GaAs Technology Characterization Vehicles (TCVs), Standard Evaluation Circuits (SECs) and MMICs for application in space. Degradation was measured in multiple 4,000 hour tests at 200/spl deg/C and 225/spl deg/C. Comparisons between circuits, TCVs, and historical database were favourable and a new diffusion model for MESFET wearout was developed.<>