Modelling transient voltage overshoot of a forward biased pn-junction diode with intrinsic doped region

Abstract

The transient voltage overshoot of forward biased pn-junction diodes is measured by VF-TLP and compared with TCAD simulations. Based on the simulation results a physics-based analytical model is developed which takes the effect of impact ionization into account and exhibits an excellent match with the TCAD simulations and measurement data.