On the properties of silicon wafers for IGBT use, manufactured by direct bonding method

Abstract

Silicon wafers for IGBT use were prepared by the direct bonding process. Dimensional tolerance, properties of the bond interface and the electrical properties of the devices made from the wafers were investigated. We found that two methods can be used in direct bonding. One is a dilute HF treatment method and the other is a doped polysilicon method. The results showed that the direct bonded wafers have a large potential to be successfully used commercially.