Electromigration characteristics of via chains for multilayered metallization

K. Okuyama, T. Fujii, Y. Tanigaki, R. Nagai
{"title":"Electromigration characteristics of via chains for multilayered metallization","authors":"K. Okuyama, T. Fujii, Y. Tanigaki, R. Nagai","doi":"10.1109/VLSIT.1990.110995","DOIUrl":null,"url":null,"abstract":"Electromigration phenomena associated with vias of multilayered TiW/AlCuSi/TiW metallization were studied. It was found that the resistance change due to stress current of the via chain was different from that of the metal line. The activation energy related to the mean time to failure (MTTF) of the via chain was much larger than that of the metal line. The alloying reaction between Al and TiW dominated the lifetime of the via chain. The TiW layer, which blocked Al flow, played an important role in the high electromigration resistance of the via","PeriodicalId":441541,"journal":{"name":"Digest of Technical Papers.1990 Symposium on VLSI Technology","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers.1990 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1990.110995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Electromigration phenomena associated with vias of multilayered TiW/AlCuSi/TiW metallization were studied. It was found that the resistance change due to stress current of the via chain was different from that of the metal line. The activation energy related to the mean time to failure (MTTF) of the via chain was much larger than that of the metal line. The alloying reaction between Al and TiW dominated the lifetime of the via chain. The TiW layer, which blocked Al flow, played an important role in the high electromigration resistance of the via
多层金属化孔链的电迁移特性
研究了TiW/AlCuSi/TiW多层金属化过程中的电迁移现象。结果表明,经孔链与金属线在应力电流作用下的电阻变化是不同的。与通孔链平均失效时间(MTTF)相关的活化能远大于与金属线相关的活化能。Al和TiW之间的合金化反应决定了通孔链的寿命。阻挡Al流动的TiW层对通孔的高电迁移电阻起着重要作用
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