{"title":"A MEMS based device interface board","authors":"Nabeeh Kandalaft, I. Basith, R. Rashidzadeh","doi":"10.1109/TEST.2010.5699296","DOIUrl":null,"url":null,"abstract":"At gigahertz frequency range, performance degradation of the device interface board increases the yield loss and the cost of manufacturing. In this poster a MEMS based solution is proposed to design a Device Interface Board (DIB) supporting high-speed connectivity between the device under test and the tester. Simulation results indicate that the proposed scheme can operate up to 50 GHz without considerable signal integrity degradation.","PeriodicalId":265156,"journal":{"name":"2010 IEEE International Test Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Test Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TEST.2010.5699296","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
At gigahertz frequency range, performance degradation of the device interface board increases the yield loss and the cost of manufacturing. In this poster a MEMS based solution is proposed to design a Device Interface Board (DIB) supporting high-speed connectivity between the device under test and the tester. Simulation results indicate that the proposed scheme can operate up to 50 GHz without considerable signal integrity degradation.