BEOL challenges for 14nm node and beyond

B. Taylor, Xuan Lin, Xunyuan Zhang, Hoon Kim, M. He, V. Ryan
{"title":"BEOL challenges for 14nm node and beyond","authors":"B. Taylor, Xuan Lin, Xunyuan Zhang, Hoon Kim, M. He, V. Ryan","doi":"10.1109/IITC.2012.6251662","DOIUrl":null,"url":null,"abstract":"Scaling the BEOL into 14nm includes challenges in both the material selection and the integration. Metallization-induced degradation of the ULK is an issue regardless of dielectric choice, or the PVD vs. ALD selection, and options for possible recovery of characteristics are numerous. In barrier/liner/seed decisions, the integration choices play into material selection, and the deposition technique's impact upon microstructure, and hence reliability, is significant. For plating, conventional processes may not allow the high fill speeds necessary, and aspect ratio constraints are driving processes to new areas. Finally, we will also address how CPI is changing as interconnect evolves.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"338 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2012.6251662","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Scaling the BEOL into 14nm includes challenges in both the material selection and the integration. Metallization-induced degradation of the ULK is an issue regardless of dielectric choice, or the PVD vs. ALD selection, and options for possible recovery of characteristics are numerous. In barrier/liner/seed decisions, the integration choices play into material selection, and the deposition technique's impact upon microstructure, and hence reliability, is significant. For plating, conventional processes may not allow the high fill speeds necessary, and aspect ratio constraints are driving processes to new areas. Finally, we will also address how CPI is changing as interconnect evolves.
14nm及以上节点的BEOL挑战
将BEOL扩展到14纳米包括材料选择和集成方面的挑战。金属化诱导的ULK降解是一个问题,无论电介质选择如何,或者PVD还是ALD选择如何,并且可能恢复特性的选择有很多。在屏障/衬管/种子的选择中,集成选择影响着材料的选择,沉积技术对微观结构的影响,从而对可靠性产生重大影响。对于电镀,传统工艺可能不允许必要的高填充速度,而纵横比限制正在推动工艺向新领域发展。最后,我们还将讨论CPI是如何随着互联的发展而变化的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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