i/sub DD/ pulse response testing applied to complex CMOS ICs

J. Beasley, S. Pour-Mozafari, D. Huggett, A. Righter, C. J. Apodaca
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引用次数: 18

Abstract

This paper presents test results for detecting defects in complex ICs by analyzing the changes observed in the power-on transient power supply currents for the IC. This test technique, called i/sub DD/ pulse response testing simultaneously pulses the V/sub DD/ and V/sub SS/ power supply rails while applying a fixed midrange bias voltage to all inputs to the DUT. The resulting power on transient current signature is then analyzed for the presence of abnormal behavior. Two methods of analyzing the transient current signature waveform are compared for two types of complex CMOS ICs. The type of defects detected by the test as well as applications of this method to production test are discussed.
i/sub DD/脉冲响应测试应用于复杂的CMOS芯片
本文介绍了通过分析IC上电瞬态电源电流的变化来检测复杂IC缺陷的测试结果。这种测试技术称为i/sub DD/脉冲响应测试,同时对V/sub DD/和V/sub SS/电源轨进行脉冲测试,同时对被测件的所有输入施加固定的中程偏置电压。然后分析产生的暂态电流信号是否存在异常行为。比较了两种复杂CMOS芯片瞬态电流特征波形的分析方法。讨论了该方法检测缺陷的类型及其在生产试验中的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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