J. Beasley, S. Pour-Mozafari, D. Huggett, A. Righter, C. J. Apodaca
{"title":"i/sub DD/ pulse response testing applied to complex CMOS ICs","authors":"J. Beasley, S. Pour-Mozafari, D. Huggett, A. Righter, C. J. Apodaca","doi":"10.1109/TEST.1997.639591","DOIUrl":null,"url":null,"abstract":"This paper presents test results for detecting defects in complex ICs by analyzing the changes observed in the power-on transient power supply currents for the IC. This test technique, called i/sub DD/ pulse response testing simultaneously pulses the V/sub DD/ and V/sub SS/ power supply rails while applying a fixed midrange bias voltage to all inputs to the DUT. The resulting power on transient current signature is then analyzed for the presence of abnormal behavior. Two methods of analyzing the transient current signature waveform are compared for two types of complex CMOS ICs. The type of defects detected by the test as well as applications of this method to production test are discussed.","PeriodicalId":186340,"journal":{"name":"Proceedings International Test Conference 1997","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings International Test Conference 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TEST.1997.639591","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
This paper presents test results for detecting defects in complex ICs by analyzing the changes observed in the power-on transient power supply currents for the IC. This test technique, called i/sub DD/ pulse response testing simultaneously pulses the V/sub DD/ and V/sub SS/ power supply rails while applying a fixed midrange bias voltage to all inputs to the DUT. The resulting power on transient current signature is then analyzed for the presence of abnormal behavior. Two methods of analyzing the transient current signature waveform are compared for two types of complex CMOS ICs. The type of defects detected by the test as well as applications of this method to production test are discussed.